? semiconductor components industries, llc, 2007 november, 2007 - rev. 13 publication order number: bdw42/d bdw42 - npn, bdw46, BDW47 - pnp bdw42 and BDW47 are preferred devices darlington complementary silicon power transistors this series of plastic, medium-power silicon npn and pnp darlington transi stors are designed for general purpose and low speed switching applications. features ? high dc current gain - h fe = 2500 (typ) @ i c = 5.0 adc. ? collector emitter sustaining voltage @ 30 madc: v ceo(sus) = 80 vdc (min) - bdw46 100 vdc (min) - bdw42/BDW47 ? low collector emitter saturation voltage v ce(sat) = 2.0 vdc (max) @ i c = 5.0 adc 3.0 vdc (max) @ i c = 10.0 adc ? monolithic construction with built-in base emitter shunt resistors ? to-220ab compact package ? pb-free packages are available* maximum ratings rating symbol value unit collector\emitter voltage bdw46 bdw42, BDW47 v ceo 80 100 vdc collector\base voltage bdw46 bdw42, BDW47 v cb 80 100 vdc emitter\base voltage v eb 5.0 vdc collector current i c 15 adc base current i b 0.5 adc total device dissipation @ t c = 25 c derate above 25 c p d 85 0.68 w w/ c operating and storage junction temperature range t j , t stg -55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction-to-case r jc 1.47 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. to-220ab case 221a-09 style 1 marking diagram 15 amp darlington complementary silicon power transistors 80-100 volt, 85 watt http://onsemi.com 1 2 3 4 device package shipping ordering information bdw42 to-220ab 50 units/rail bdw46 to-220ab 50 units/rail BDW47g 50 units/rail BDW47 to-220ab (pb-free) 50 units/rail to-220ab preferred devices are on semiconductor recommended choices for future use and best overall value bdwxx = device code x = 42, 46, or 47 a = assembly location y = year ww = work week g = pb-free package bdw42g to-220ab (pb-free) 50 units/rail bdw46g to-220ab (pb-free) 50 units/rail bdwxx aywwg
bdw42 - npn, bdw46, BDW47 - pnp http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? collector emitter sustaining voltage (note 1) (i c = 30 madc, i b = 0) bdw46 bdw42/BDW47 ????? ????? ????? ??? ??? ??? ???? ???? ???? ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ???? ???? ???? ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ???? ???? ???? ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ???? ???? ???? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics (note 1) ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ???? ???? ???? ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ???? ???? ???? ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ???? ???? ???? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? second breakdown (note 2) ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ????? ????? ??? ??? ??? ??? ??? ???? ???? ???? ???? ???? ??? ??? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? magnitude of common emitter small signal short circuit current transfer ratio (i c = 3.0 adc, v ce = 3.0 vdc, f = 1.0 mhz) ????? ????? ??? ??? ???? ???? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ???? ???? ???? ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ???? ???? ???? ??? ??? ??? s, duty cycle = 2.0%. 2. pulse test non repetitive: pulse width = 250 ms.
bdw42 - npn, bdw46, BDW47 - pnp http://onsemi.com 3 90 60 40 20 0 25 50 75 100 125 150 figure 1. power temperature derating curve t c , case temperature ( c) p d , power dissipation (watts) 80 70 50 30 10 figure 2. switching times test circuit 5.0 0.1 figure 3. switching times i c , collector current (amp) t, time (s) 3.0 0.7 0.5 0.3 0.2 0.05 0.2 0.3 0.7 3.0 10 t d @ v be(off) = 0 v v cc = 30 v i c /i b = 250 i b1 = i b2 t j = 25 c t f 0.07 1.0 5.0 t s t r 0.1 1.0 2.0 0.5 2.0 7.0 0 v cc - 30 v scope tut + 4.0 v t r , t f 10 ns duty cycle = 1.0% r c d 1 must be fast recovery types, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma 25 s d 1 51 r b and r c varied to obtain desired current levels v 2 approx + 8.0 v v 1 approx - 12 v 8.0 k 150 for t d and t r , d 1 id disconnected and v 2 = 0 for npn test circuit reverse all polarities r b figure 4. thermal response t, time or pulse width (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 r(t) effective transient thermal resist ance (normalized) 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000 500 r jc (t) = r(t) r jc r jc = 1.92 c/w d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.05 0.1 0.02 0.01 0.03 0.3 3.0 30 300
bdw42 - npn, bdw46, BDW47 - pnp http://onsemi.com 4 active-region safe operating area second breakdown limit bonding wire limit thermal limited @ t c = 25 c (single pulse) 50 1.0 figure 5. bdw42 20 2.0 0.05 10 20 100 t j = 25 c bdw42 1.0 ms 0.1 ms 0.2 5.0 0.5 i c , collector current (amp) v ce , collector-emitter voltage (volts) 10 30 70 1.0 0.1 0.5 ms dc 2.0 50 3.0 5.0 7.0 figure 6. bdw46 and BDW47 second breakdown limit bonding wire limit thermal limited @ t c = 25 c (single pulse) 50 1.0 20 2.0 0.05 10 20 100 t j = 25 c bdw46 BDW47 1.0 ms 0.1 ms 0.2 5.0 0.5 i c , collector current (amp) v ce , collector-emitter voltage (volts) 10 30 70 1.0 0.1 0.5 ms dc 2.0 50 3.0 5.0 7.0 there are two limitations on the power handling ability of a transistor: average junc tion temperature and second breakdown. safe operating area curves indicate i c - v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor mu st not be subjected to greater dissipation than the curves indicate. the data of figure 5 and 6 is based on t j(pk) = 200 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 200 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. *linear extrapolation 10,000 1.0 figure 7. small-signal current gain f, frequency (khz) 10 2.0 5.0 10 20 50 100 200 1000 500 300 100 5000 h fe , small-signal current gain 20 3000 200 500 2000 1000 30 50 bdw46, 47 (pnp) bdw42 (npn) t j = 25 c v ce = 3.0 v i c = 3.0 a 300 0.1 figure 8. capacitance v r , reverse voltage (volts) 30 1.0 2.0 5.0 20 100 10 c, capacitance (pf) 200 100 70 50 t j = + 25 c c ib c ob 50 0.2 0.5 bdw46, 47 (pnp) bdw42 (npn)
bdw42 - npn, bdw46, BDW47 - pnp http://onsemi.com 5 0.1 figure 9. dc current gain i c , collector current (amp) 0.2 0.3 0.5 0.7 1.0 2.0 10 500 300 h fe , dc current gain t j = 150 c 25 c -55 c v ce = 3.0 v 200 7.0 bdw42 (npn) bdw46, 47 (pnp) 20,000 5000 10,000 3000 2000 1000 3.0 5.0 0.1 i c , collector current (amp) 0.2 0.3 0.5 0.7 1.0 2.0 10 500 300 h fe , dc current gain t j = 150 c 25 c -55 c v ce = 3.0 v 200 7.0 20,000 5000 10,000 3000 2000 1000 3.0 5.0 7000 700 v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) figure 10. collector saturation region 3.0 i b , base current (ma) 0.3 0.5 1.0 2.0 3.0 5.0 7.0 30 2.6 2.2 1.8 1.4 i c = 2.0 a t j = 25 c 4.0 a 6.0 a 1.0 0.7 20 10 3.0 i b , base current (ma) 0.3 0.5 1.0 2.0 3.0 5.0 7.0 30 2.6 2.2 1.8 1.4 i c = 2.0 a t j = 25 c 4.0 a 6.0 a 1.0 0.7 20 10 i c , collector current (amp) v be(sat) @ i c /i b = 250 v, voltage (volts) figure 11. ?on? voltages i c , collector current (amp) v, voltage (volts) v be(sat) @ i c /i b = 250 v ce(sat) @ i c /i b = 250 t j = 25 c v be @ v ce = 4.0 v v be @ v ce = 4.0 v v ce(sat) @ i c /i b = 250 t j = 25 c 0.1 0.2 0.3 0.5 0.7 1.0 2.0 10 7.0 3.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 10 7.0 3.0 5.0 3.0 2.5 2.0 1.5 1.0 0.5 3.0 2.5 2.0 1.5 1.0 0.5
bdw42 - npn, bdw46, BDW47 - pnp http://onsemi.com 6 v , temperature coefficient (mv/ c) +5.0 figure 12. temperature coefficients i c , collector current (amp) 0.1 0.2 0.3 1.0 2.0 3.0 5.0 7.0 10 -55 c to 25 c +4.0 +3.0 +1.0 0 -4.0 -1.0 -2.0 -3.0 -5.0 vb for v be * vc for v ce(sat) -55 c to 25 c 25 c to 150 c 25 c to 150 c *i c /i b 250 0.5 0.7 +5.0 i c , collector current (amp) 0.1 0.2 0.3 1.0 2.0 3.0 5.0 10 -55 c to +25 c v , temperature coefficients (mv/ c) +4.0 +3.0 +1.0 0 -4.0 -1.0 -2.0 -3.0 -5.0 vb for v be * vc for v ce(sat) -55 c to + 25 c + 25 c to 150 c + 25 c to 150 c *i c /i b 250 0.5 +2.0 +2.0 bdw42 (npn) bdw46, 47 (pnp) 10 5 figure 13. collector cut-off region v be , base-emitter voltage (volts) 10 2 10 1 10 0 , collector current (a) i c 10 -1 -0.2 -0.4 0 +0.2 +0.4 +0.6 v ce = 30 v t j = 150 c 100 c 25 c reverse forward 10 3 10 4 -0.6 -0.8 -1.0 -1.2 -1.4 10 5 v be , base-emitter voltage (volts) 10 2 10 1 10 0 , collector current (a) i c 10 -1 +0.2 +0.4 0 -0.2 -0.4 -0.6 v ce = 30 v reverse forward 10 3 10 4 +0.6 +0.8 +1.0 +1.2 + 1.4 t j = 150 c 100 c 25 c figure 14. darlington schematic npn bdw42 pnp bdw46 BDW47 base collector emitter 8.0 k 60 base collector emitter 8.0 k 60
bdw42 - npn, bdw46, BDW47 - pnp http://onsemi.com 7 package dimensions to-220 case 221a-09 issue ae notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane -t- c s t u r j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each custom er application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800-282-9855 toll free ?usa/canada europe, middle east and africa technical support: ?phone: 421 33 790 2910 japan customer focus center ?phone: 81-3-5773-3850 bdw42/d literature fulfillment : ?literature distribution center for on semiconductor ?p.o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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